For over fifty years, silicon has enabled exponential growth in computing performance. But as devices shrink into the sub-5 nm regime, silicon’s carrier mobility drops sharply, and leakage currents rise—making it increasingly difficult to sustain progress. Advanced lithography can extend performance only so far before hitting fundamental physics barriers.

This is where 2D semiconductors, particularly transition-metal dichalcogenide (TMD) monolayers, enter the picture. These materials maintain exceptional electronic properties even at a single atomic layer, preserving mobility and reducing short-channel effects. Their ultrathin geometry allows unprecedented electrostatic control, enabling further transistor scaling.

As industry roadmaps increasingly incorporate 2D materials for future nodes, the ability to manufacture large-area, defect-free monolayers will be essential. Gold-Stamp™ technology offers a pathway to produce these materials at scale—opening the door to devices that can finally move beyond the limits of silicon.

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